Advanced equipment and new processing Lab for the production of Silicon Carbide wafers (Silicon Carbide Integrated Laboratory)
(Law 297/89 – Art 12 / DM 593, August 08, 2000 – Project DM23176)
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Epitaxial Technology Center (E.T.C.)
National Research Council – Institute for Microelectronic and Microsystems (CNR – IMM)
Honors Center of Italian Universities (H2CU)
NUmerical Methods Implementation for Design of Industrial Applications (Nu.M.I.D.I.A.)
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The aim of SiCilab project is to prepare an Integrated Laboratory, with both public and private assets, on Silicon Carbide (SiC) technologies.
The partners want to advance knowledge in the field of SiC synthesis Reactors, Bulk and Epitaxial growth processes, advanced characterization techniques of SiC wafers, numerical simulation of reactor and growth processes.
The goal for the next years is to obtain SiC wafers of large diameter and low defect density.
Together with the research activity, a training programme will be developed in order to train industrial research fellows, expert in the growth of high gap semiconductors.
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